High compressive stress in nanocrystalline diamond films grown by microwave plasma chemical vapor deposition

Diamond and Related Materials

Volumn 10, Issue 3-7, 2001, Pages 352-357

  Sharda, T ^a   Soga, T ^a   Jimbo, T ^a   Umeno, M ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Adhesion; Bias; Chemical vapor deposition; Diamond films; Grain size; Raman spectroscopy; Strees; Substrate bending

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPRESSIVE STRESS; METHANE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SILICON; SUBSTRATES; X RAY DIFFRACTION;

CARBON THIN FILMS;

DIAMOND FILMS;

DIAMOND;

EID: 0035270402     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(00)00504-5     Document Type: Article

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