Biased enhanced growth of nanocrystalline diamond films by microwave plasma chemical vapor deposition

Diamond and Related Materials

Volumn 9, Issue 7, 2000, Pages 1331-1335

  Sharda, T ^a   Soga, T ^a   Jimbo, T ^a   Umeno, M ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Bias; CVD; Diamond films; Grain size; Raman spectroscopy

Indexed keywords

ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; CRYSTAL STRUCTURE; FILM GROWTH; GRAIN SIZE AND SHAPE; NANOSTRUCTURED MATERIALS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON; SURFACE ROUGHNESS; SURFACE STRUCTURE; X RAY DIFFRACTION ANALYSIS;

BIASED ENHANCED GROWTH; MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION; NANOCRYSTALLINE DIAMOND FILMS;

DIAMOND FILMS;

EID: 0033700673     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(00)00247-8     Document Type: Article

References (28)

1. Clausing R.E., Horton L.L., Angus J.C., Koidl P. Diamond and Diamond-like Films and Coatings. 1991;Plenum, New York.
2. Paillard V., Melinon P., Dupuis V., Perez J.P., Perez A. Phys. Rev. Lett. 71:1993;4170.
3. Jiang X., Klages C.-P., Zachai R., Hartweg M., Fusser H.-J. Appl. Phys. Lett. 62:1993;3438.
4. Sharda T., Vaidya A., Misra D.S. et al. J. Appl. Phys. 83:1998;1120.
5. Merkulov V.I., Lowndes D.H., Jellison G.E. Jr., Puretzky A.A. Appl. Phys. Lett. 73:1998;2591.
6. Sikder A.K., Sharda T., Misra D.S., Selvam P. Diamond Relat. Mater. 7:1998;1010.
7. Wang W.N., Fox N.A., Richardson D., Lynch G.M., Steeds J.W. J. Appl. Phys. 81:1997;1505.
8. Ding M.Q., Myers A.F., Choi W.B. et al. J. Vac. Sci. Technol. B. 15:1997;840.
9. Xu N.S., She J.C., Huq S.E., Chen J., Deng S.Z. Appl. Phys. Lett. 73:1998;3668.
10. Collins C.B., Davanloo F., Lee T.J., Park H., You J.H. J. Vac. Sci. Technol. B. 11:1993;1936.
11. Lossy R., Pappas D.L., Roy R.A., Doyle J.P., Bruley J. J. Appl. Phys. 77:1995;4750.
12. Mckenzie D.R., Muller D.A., Paithorpe B.A. Phys. Rev. Lett. 67:1991;773.
13. Lifshitz Y., Lempert G.D., Grossman E. Phys. Rev. Lett. 72:1994;2753.
14. Hirari H., Kondo K., Yoshizawa N., Shiraishi Me. Appl. Phys. Lett. 64:1994;1797.
15. Hirari H., Kondo K., Kim M., Koinuma H., Kurashima K., Bando Y. Appl. Phys. Lett. 71:1997;3016.
16. Zhou D., McCauley T.G., Qin L.C., Krauss A.R., Gruen D.M. J. Appl. Phys. 83:1998;540.
17. Ding M.Q., Gruen D.M., Krauss A.R., Auciello O., Corrigan T.D., Chang R.P.H. J. Vac. Sci. Technol. B. 17:1999;705.
18. Lee J., Collins R.W., Messier R., Strausser Y.E. Appl. Phys. Lett. 70:1997;1527.
19. Robertson J., Gerber J., Sattel S., Weiler M., Jung K., Ehrhardt H. Appl. Phys. Lett. 66:1995;3287.
20. Paillard V., Melinon P., Dupuis V. et al. Phys. Rev. B. 49:1994;11433.
21. Logothetidis S. Appl. Phys. Lett. 69:1996;158.
22. Catledge S.A., Vohra Y.K. J. Appl. Phys. 84:1998;6469.
23. Nemanich R.J., Glass J.T., Lucovsky G., Shroder R.E. J. Vac. Sci. Technol. A. 6:1988;1783.
24. Wada N., Solin S.A. Physica B. 105:1981;353.
25. Lurie P.G., Wilson J.M. Surf. Sci. 65:1977;476.
26. Sharda T., Misra D.S., Seibt E.W., Selvam P. J. Vac. Sci. Technol. A. 16:1998;413.
27. Ravi S., Silva P., Xu S., Tay B.X., Tan H.S., Milne W.I. Appl. Phys. Lett. 69:1996;491.
28. Sharda T., Misra D.S., Avasthi D.K., Mehta G.K. Solid State Commun. 98:1996;879.