Fabrication and characterization of GaAs single electron devices having single and multiple dots based on schottky in-plane-gate and wrap-gate control of two-dimensional electron gas

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1678-1685

  Kasai, Seiya ^a   Jinushi, Kei Ichiroh ^a   Tomozawa, Hidemasa ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

Coulomb blockade; Multiple quantum dot; Schottky in plane gate (IPG); Schottky wrap gate (WPG); Single electron transistors; Single quantum dot

Indexed keywords

EID: 3242715603     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1678     Document Type: Article

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