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Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1678-1685

Fabrication and characterization of GaAs single electron devices having single and multiple dots based on schottky in-plane-gate and wrap-gate control of two-dimensional electron gas

Author keywords

Coulomb blockade; Multiple quantum dot; Schottky in plane gate (IPG); Schottky wrap gate (WPG); Single electron transistors; Single quantum dot

Indexed keywords


EID: 3242715603     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1678     Document Type: Article
Times cited : (63)

References (20)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.