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Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1678-1685
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Fabrication and characterization of GaAs single electron devices having single and multiple dots based on schottky in-plane-gate and wrap-gate control of two-dimensional electron gas
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Author keywords
Coulomb blockade; Multiple quantum dot; Schottky in plane gate (IPG); Schottky wrap gate (WPG); Single electron transistors; Single quantum dot
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Indexed keywords
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EID: 3242715603
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.36.1678 Document Type: Article |
Times cited : (63)
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References (20)
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