The strong correlation between interface microstructure and barrier height in Pt/n-InP Schottky contacts formed by an in situ electrochemical process

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 2 B, 1999, Pages 1103-1106

  Sato, Taketomo ^a   Kaneshiro, Chinami ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

C V; DIGS model; Electrochemical process; I V; InP; Pt; Pulse plating; Schottky barrier; SEM; Surface morphology

Indexed keywords

CRYSTAL MICROSTRUCTURE; ELECTRIC CONTACTS; ELECTRIC VARIABLES MEASUREMENT; ELECTRODEPOSITION; ETCHING; INTERFACES (MATERIALS); MORPHOLOGY; PARTICLE SIZE ANALYSIS; PLATINUM; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS;

ANODIC ETCHING; CAPACITANCE VOLTAGE MEASUREMENT; CURRENT VOLTAGE MEASUREMENT; DISORDER INDUCED GAP STATE MODEL; IN SITU ELECTROCHEMICAL PROCESS; INTERFACE MICROSTRUCTURE; METAL SEMICONDUCTOR INTERFACES; PULSE PLATING; SCHOTTKY BARRIER HEIGHT;

SEMICONDUCTOR MATERIALS;

EID: 0032662413     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.1103     Document Type: Article

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