1.3-μm buried-heterostructure lasers using a CH4 reactive-ion-etched mesa structure grown by metalorganic vapor phase epitaxy

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1996, Pages 384-387

  Kondo, Y ^a   Kishi, K ^a   Itoh, M ^a   Oohashi, H ^a   Itaya, Y ^a   Yamamoto, M ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; DRY ETCHING; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; METHANE; REACTIVE ION ETCHING; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; ZINC;

BUFFER LAYERS; BURIED HETEROSTRUCTURE LASERS; MESA STRUCTURE;

SEMICONDUCTOR LASERS;

EID: 0029698174     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)