Continuous wave lasing in GaInAsP microdisk injection laser with threshold current of 40μA

Electronics Letters

Volumn 36, Issue 9, 2000, Pages 790-791

  Fujita, M ^a   Ushigome, R ^a   Baba, T ^a  

^a YOKOHAMA NATIONAL UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; ELECTRIC CURRENTS; ELECTRON BEAMS; ELECTRON CYCLOTRON RESONANCE; PLASMA ETCHING; PRESSURE EFFECTS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE;

CONTINUOUS WAVE LASING; GALLIUM INDIUM ARSENIUM PHOSPHIDE; INDUCTIVELY COUPLED PLASMA ETCHING; MICRODISK INJECTION LASER; RATE EQUATION ANALYSIS; THRESHOLD CURRENT;

INJECTION LASERS;

EID: 0033734525     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20000609     Document Type: Article

References (5)

1. MCCALL, S.L., LEVI, A.F.J., SLUSHER, R.E., PEARTON, S.J., and LOGAN, R.A.: 'Whispering gallery mode microdisk lasers', Appl. Phys. Lett., 1992, 60, (3), pp. 289-291
2. BABA, T., FUJITA, M., SAKAI, A., KIHARA, M., and WATANABE, R.: 'Lasing characteristics of GaInAsP/InP strained quantum-well microdisk injection lasers with diameter of 2-10 μm', IEEE Photonics Technol. Lett., 1997, 9, (7), pp. 878-880
3. FUJITA, M., SAKAI, A., and BABA, T.: 'Ultra-small and ultra-low threshold GaInAsP-InP microdisk injection lasers - design, fabrication, lasing characteristics and spontaneous emission factor', IEEE J. Sel. Topics Quantum Electron., 1999, QE-5, (3), pp. 673-681
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5. OSINSKI, J.S., ZOU, Y., GRODZINSKI, P., MATHUR, A., and DAPKUS, P.D.: 'Low-threshold-current-density 1.5 μm lasers using compressive strained InGaAsP quantum wells', IEEE Photonics Technol. Lett., 1992, 4, (1), pp. 10-13