Evidences for the existence of a high-carrier-density layer near undoped-GaN/α-Al2O3 substrate interface

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 689-692

  Yamamoto, A ^a   Azuma, K ^a   Ueno, K ^a   Tsuji, Y ^a   Hashimoto, A ^a  

^a UNIVERSITY OF FUKUI   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CAPACITANCE MEASUREMENT; CARRIER CONCENTRATION; ELECTROCHEMICAL ELECTRODES; ELECTROCHEMISTRY; HALL EFFECT; INTERFACES (MATERIALS); SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; ULTRAVIOLET RADIATION; VOLTAGE MEASUREMENT;

GALVANOSTATIC ANODIZATION;

SEMICONDUCTING FILMS;

EID: 0033221349     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<689::AID-PSSA689>3.0.CO;2-F     Document Type: Article

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