Asymmetry in effective-channel length of n- and p-MOSFETs

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 1997, Pages 21-24

  Logan, Ron ^a   Taur, Yuan ^a   Crabbe, Emmanuel ^a  

^a IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; MATHEMATICAL MODELS; SEMICONDUCTING BORON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

SEMICONDUCTOR INSULATOR INTERFACE; SHORT CHANNEL EFFECTS;

MOSFET DEVICES;

EID: 0030719730     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)