Deep centers and persistent photoconductivity studies in variously grown GaN films

MRS Internet Journal of Nitride Semiconductor Research

Volumn 5, Issue SUPPL. 1, 2000, Pages

  Polyakov, Alexander Y ^a   Smirnov, Nikolai B ^a   Govorkov, Anatoliy V ^a   Usikov, Alexander S ^b   Shmidt, Natalie M ^b   Pushnyi, Boris V ^b   Tsvetkov, Denis V ^b   Stepanov, Sergey I ^b   Dmitriev, Vladimir A ^c   Mil'vidskii, Mikhail G ^a   Pavlov, Vladimir F ^a  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

^c TDI Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; DISLOCATIONS (CRYSTALS); ELECTRON TRAPS; ENERGY GAP; HOLE TRAPS; PHOTOCONDUCTIVITY; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH;

BAND GAP; DEEP CENTERS; MINORITY CARRIERS; SURFACE RECOMBINATION;

GALLIUM NITRIDE;

EID: 3242795019     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300005287     Document Type: Conference Paper

References (7)

1. A.Y. Polyakov, in GaN and Related Materials, ed. S.J. Pearton (Gordon&Breach Science Publishers, Singapore, 1999) pp. 173-233
2. nd Int. Conf. on Nitride Semiconductors (ICNS'97), Tokushima, Japan, 1997, pp. 6-8
3. W.V. Lundin, B.V. Pushnyi, A.S. Usikov, M.E. Gaevski, M.V. Baidakova and A.V. Sakharov, Inst. Phys. Conf. Ser. 155, 319 (1997)
4. Yu. V. Melnik, I.P. Nikitina, A.S. Zubrilov, A.A. Sitnikova and V.A. Dmitriev, Inst. Phys. Conf. Ser. 142, 863 (1996)
5. A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, D.W. Greve, M. Skowronski, M. Shin and J.M. Redwing, MRS Internet J. Nitride Semicond. Res. (MIJ-NSR), 3, article 37 (1998)
6. A.Y. Polyakov, N.B. Smirnov, A.S. Usikov, A.V. Govorkov and B.V. Pushnyi, Solid-St. Electron., 42, 1959 (1998)
7. L.S. Berman and A.A. Lebedev, Capacitance Spectroscopy of Deep Centers in Semiconductors (Nauka, Leningrad, 1981) chapter 1, p. 29 (in Russian)