Growth of 4H and 6H SiC in trenches and around stripe mesas

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 131-134

  Nordell, N ^a   Karlsson, S ^a   Konstantinov, A O ^b  

^a ACREO AB   (Sweden)

^b ABB CORPORATE RESEARCH   (Sweden)

Author keywords

Epitaxy; Growth Habit; Mesa; Non Planar Substrates; Trench

Indexed keywords

ALUMINUM; ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; CRYSTAL ORIENTATION; DIFFUSION IN SOLIDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SUBSTRATES; VAPOR PHASE EPITAXY;

SCANNING CAPACITANCE MICROSCOPY; STRIP MESAS;

SILICON CARBIDE;

EID: 0031648395     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

References (5)

1. T. Kimoto, H. Matsunami, J. Appl. Phys. 76 (1994) p. 7322.
2. A.E. Nikolaev, V.A. Ivantsov, S.A. Rendakova, M.N. Blashenkov, and V.A. Dimitriev, J. Crystal Growth 166 (1996) p. 607.
3. D.W. Shaw J. Crystal Growth 47 (1979) p. 509.
4. N. Nordell, A. Schöner, and S.G. Andersson, J. Electrochem. Soc. 143 (1996) p. 2910.
5. E. Kaldis, in Crystal Growth, Theory and techniques, ed. by C.H.L. Goodman, Plenum press, London, (1974) p.49.