Simulation of image quality issues at low k1 for 100nm lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4409, Issue , 2001, Pages 33-40

  Neureuther, A ^a   Adam, K ^a   Hotta, S ^a   Pistor, T ^a   Robbins, G ^a   Deng, Y ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Aberration monitors; Aberrations; Buried defects; Cross talk; Defects; Diffracted orders; Diffraction; Imaging; Linewidth variation; Phase defect; Phase shift masks; Simulation

Indexed keywords

ABERRATIONS; ANTIREFLECTION COATINGS; COMPUTER SIMULATION; CROSSTALK; DEFECTS; DIFFRACTION; IMAGE QUALITY; IMAGING TECHNIQUES; INTEGRATED CIRCUIT LAYOUT; MASKS; MULTILAYERS; OPTICAL INSTRUMENT LENSES;

BURIED DEFECTS; PHASE DEFECTS; PHASE SHIFT MASK IMAGE IMBALANCE; PHASE SHIFT MASKS;

LITHOGRAPHY;

EID: 0035184726     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.438395     Document Type: Conference Paper

References (13)

1. Modeling defect-feature interactions in the presence of aberrations
2. Determination of high-order lens aberrations using phase/amplitude linear algebra
3. Phase-shifting mask topography effects on lithographic image quality
4. Effects of shifter edge topography on through focus performance
5. Simplified models for edge transitions in rigorous mask modeling
6. Optimizing edge topography of alternating phase shift masks using rigorous mask modeling
7. Characterization of phase defects in phase shift masks
8. Bufferlayer smoothing strategy for the mitigation of Mo/Si reticle defects nucleated by small substrate particles
9. Extreme ultraviolet mask defect simulation: Low-profile defects
10. Models for characterizing the printability of buried EUV defects
11. EUV scattering and printability of mask substrate defects