Model of boron incorporation into silicon epitaxial film in a B2H6-SiHCl3-H2 system

Journal of Crystal Growth

Volumn 222, Issue 1-2, 2001, Pages 183-193

  Habuka, Hitoshi ^a   Otsuka, Toru ^a   Qu, Wei Feng ^a   Shimada, Manabu ^b   Okuyama, Kikuo ^b  

^a SHIN ETSU CHEMICAL CO LTD   (Japan)

^b HIROSHIMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON COMPOUNDS; CARRIER COMMUNICATION; CHEMISORPTION; DEPOSITION; EPITAXIAL GROWTH; FILM GROWTH; HYDROGEN; RATE CONSTANTS; SEMICONDUCTOR GROWTH; SILICON WAFERS;

DIBORANE GAS;

SEMICONDUCTING FILMS;

EID: 0035151895     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00911-8     Document Type: Article

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