Transport of Dopant Gas during Silicon Epitaxial Thin-Film Growth in a Horizontal Reactor

Kagaku Kogaku Ronbunshu

Volumn 23, Issue 6, 1997, Pages 772-779

  Habuka, Hitoshi ^a   Katayama, Masatake ^a   Shimada, Manabu ^b   Okuyama, Kikuo ^b  

^a SHIN ETSU CHEMICAL CO LTD   (Japan)

^b HIROSHIMA UNIVERSITY   (Japan)

Author keywords

B2H6; Dopant gas; Epitaxial reactor; Silicon epitaxial growth; Thermal diffusion; Transport phenomena

Indexed keywords

EID: 33751431335     PISSN: 0386216X     EISSN: 13499203     Source Type: Journal    
DOI: 10.1252/kakoronbunshu.23.772     Document Type: Article

References (11)

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