Effect of boron-doping on the growth rate of atmospheric pressure chemical vapour deposition of Si

Journal of Crystal Growth

Volumn 182, Issue 1-2, 1997, Pages 53-59

  Grützmacher, Detlev ^a  

^a PAUL SCHERRER INSTITUTE   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

BORON COMPOUNDS; NUCLEATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILANES;

BORANES;

CHEMICAL VAPOR DEPOSITION;

EID: 0031331947     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00309-6     Document Type: Article

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