Epitaxial film thickness in the low-temperature growth of Si(100) by plasma enhanced chemical vapor deposition

Applied Physics Letters

Volumn 68, Issue 3, 1996, Pages 349-351

  Varhue, W J ^a   Rogers, J L ^a   Andry, P S ^a   Adams, E ^b  

^a University of Vermont   (United States)

^b IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000068409     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116712     Document Type: Article

References (7)

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