A stochastic model for crystal-amorphous transition in low temperature molecular beam epitaxial Si (111)

Journal of Applied Physics

Volumn 80, Issue 11, 1996, Pages 6219-6222

  Venkatasubramanian, R ^a   Gorantla, S ^a   Muthuvenkatraman, S ^a   Dorsey, D L ^b  

^a University of Nevada Las Vegas   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012702876     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363698     Document Type: Article

References (10)

1. M. Ichikawa, Mater. Sci. Eng. R. Rep. 4, 147 (1986).
2. H. Jorke, H. J. Herzog, and H. Kibbel, Phys. Rev. B 40, 2005 (1989).
3. D. J. Eaglesham, J. Appl. Phys. 77, 3597 (1995).
4. Y.-W. Mo, R. Kariotis, B. S. Swartzenruber, M. B. Webb, and M. G. Legally, J. Vac. Sci. Technol. B 1, 808 (1983).
5. D. J. Eaglesham, H.-J. Gossmann, and M. Cerullo, Phys. Rev. Lett. 65, 1227 (1990).
6. B. E. Weir, B. S. Freer, R. L. Headrick, D. J. Eaglesham, G. H. Gilmer, J. Bevk, and L. C. Feldman, Appl. Phys. Lett. 59, 204 (1991).
7. M. V. Ramana Murty and H. A. Atwater, Phys. Rev. B 49, 8483 (1994).
8. D. J. Eaglesham, F. C. Unterwald, H. Luftman, D. P. Adams, and S. M. Yalisove, J. Appl. Phys. 74, 6615 (1993).
9. R. Venkatasubramanian, J. Mater. Res. 7, 1222 (1992).
10. R. Venkatasubramanian, J. Mater. Res. 7, 1236 (1992).