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Volumn 85, Issue 1, 1999, Pages 501-511

Growth of Si1-xGex(011) on Si(011)16×2 by gas-source molecular beam epitaxy: Growth kinetics, Ge incorporation, and surface phase transitions

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000250262     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369481     Document Type: Article
Times cited : (11)

References (34)
  • 26
    • 22244431830 scopus 로고
    • Ph.D. thesis, University of Illinois
    • T. R. Bramblett, Ph.D. thesis, University of Illinois, 1994.
    • (1994)
    • Bramblett, T.R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.