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Materials Science and Engineering: A

Volumn 253, Issue 1-2, 1998, Pages 50-61

Implantation damage and epitaxial regrowth of silicon studied by differential reflectometry

(1) Hummel, R E a

a University of Florida (United States)

Author keywords

Differential reflectometry; Implantation damage; Ion implantation; Optical; Silicon

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; EPITAXIAL GROWTH; ION IMPLANTATION; OPTICAL VARIABLES MEASUREMENT; RADIATION DAMAGE;

DIFFERENTIAL REFLECTOMETRY; IMPLANTATION DAMAGE; ISOCHRONAL ANNEALING;

SEMICONDUCTING SILICON;

EID: 0039527060 PISSN: 09215093 EISSN: None Source Type: Journal
DOI: 10.1016/s0921-5093(98)00709-6 Document Type: Article

Times cited : (1)

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