Nonuniformities in free-standing GaN substrates

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 79, Issue 1, 2001, Pages 16-19

  Kim, H M ^a   Oh, J E ^b   Kang, T W ^a  

^a Dongguk University   (South Korea)

^b Ctr Electron Mat Components H   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL GROWTH; GALLIUM NITRIDE; HYDRIDES; PHOTOLUMINESCENCE; SAPPHIRE; SUBSTRATES; THERMAL EXPANSION; VAPOR PHASE EPITAXY; X RAY DIFFRACTION ANALYSIS;

FREE-STANDING SUBSTRATES; HYDRIDE VAPOR-PHASE EPITAXY (HVPE);

OPTICAL FILMS;

EID: 0035089225     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00543-2     Document Type: Article

References (13)

1. Thurmond C.D., Rogan R.A. J. Electrochem. Soc. 119:1972;622.
2. Madar R., Jacob G., Hallais J., Fruchart R. J. Cryst. Growth. 31:1975;197.
3. Porowski S., Grzegory I. J. Cryst. Growth. 178:1997;174.
4. Detchprohm T., Hiramatsu K., Amano H., Akasaki I. Appl. Phys. Lett. 61:1992;2688.
5. Melnik Y.V., Vassilevski K.V., Nikitina I.P., Babanin A.I., Davydov V.Y., Dmitriev V.A. MRS Internet J. Nitride Semicond. Res. 2:1997;39.
6. Usui A., Sunakawa H., Sakai A., Yamaguchi A.A. Jpn. J. Appl. Phys. 36:1997;L899.
7. Molnar R.J., Götz W., Romano L.T., Johnson N.M. J. Cryst. Growth. 178:1997;147.
8. Romano L.T., Molnar R.J., Krusor B.S., Anderson G.A., Bour D.P., Maui P. Mater. Res. Soc. Symp. Proc. 423:1996;245.
9. Eckey L., Hoffmann A., Heitz R., Broser I., Meyer B.K., Detchprom T., Hiramatsu K., Amano H., Akasaki I. Mater. Res. Soc. Symp. Proc. 395:1996;589.
10. Perkins N.R., Horton M.N., Bandic Z.Z., McGill T.C., Kuech T.F. Mater. Res. Soc. Symp. Proc. 395:1996;243.
11. In this study residual gas in the quartz chamber was exhausted at atmosphere pressure after growth. But top surface of GaN film was clear when residual gas was exhausted compulsorily by rotary pump after growth. So we considered that top surface of GaN film had a low quality because residual gas in the chamber react on the as-grown surface of GaN film during cool-down process.
12. Arnaudov B., Paskova T., Goldys E.M., Ivanov I.G., Yakimova R., Evtimova S., Henry A., Monemar B. J. Appl. Phys. 85:1999;7888.
13. Molnar R.J., Nichols K.B., Maki P., Brown E.R., Melngailis I. Mater. Res. Symp. Proc. 378:1995;479.