Application of a two-step growth to the formation of epitaxial CoSi2 films on Si(001) surfaces: Comparative study using reactive deposition epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 1, 2001, Pages 269-275

  Hayashi, Y ^a   Katoh, T ^a   Ikeda, H ^a   Sakai, A ^a   Zaima, S ^a   Yasuda, Y ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

CoSi; CoSi2; Epitaxial growth; Metal silicon interface; Reactive deposition epitaxy; Self aligned silicide (salicide); Solid phase epitaxy; Surface morphology

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; COBALT COMPOUNDS; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; FILM GROWTH; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; STOICHIOMETRY; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

REACTIVE DEPOSITION EPITAXY (RDE); SOLID-PHASE EPITAXY (SPE);

METALLIC FILMS;

EID: 0035062292     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.40.269     Document Type: Article

References (25)