SCOPUS 정보 검색 플랫폼

Surface Science

Volumn 438, Issue 1-3, 1999, Pages 116-122

Solid-phase epitaxial growth of CoSi2 on clean and oxygen-adsorbed Si(001) surfaces

(5) Hayashi, Yukihiro a Yoshinaga, Motoki b Ikeda, Hiroya b Zaima, Shigeaki b Yasuda, Yukio b

a NAGOYA MUNICIPAL INDUSTRIAL RESEARCH INSTITUTE (Japan)

b NAGOYA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; ANNEALING; COBALT ALLOYS; INTERFACIAL ENERGY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SURFACE ACTIVE AGENTS; SURFACE PHENOMENA; TEMPERATURE;

COBALT DISILICIDE; ENERGETICS; SOLID PHASE GROWTH; STRANSKI-KRASTANOV MODE;

EPITAXIAL GROWTH;

EID: 0033315220 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(99)00559-2 Document Type: Article

Times cited : (22)

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