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Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 375-379

Thermally induced strain in MBE grown GaN layers

(5) Heinke, H a Kirchner, V a Einfeldt, S a Birkle, U a Hommel, D a

a UNIVERSITY OF BREMEN (Germany)

Author keywords

GaN; High resolution X ray diffraction; Thermal expansion; Thermally induced strain

Indexed keywords

LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; NITRIDES; SAPPHIRE; SEMICONDUCTOR GROWTH; STRAIN; THERMAL EFFECTS; THERMAL EXPANSION; X RAY CRYSTALLOGRAPHY;

THERMALLY INDUCED STRAIN;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032092035 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00316-9 Document Type: Article

Times cited : (7)

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