Evaluation of molybdenum silicide for use as a 193 nm phase-shifting absorber in photomask manufacturing

Proceedings of SPIE- The International Society for Optical Engineering

Volumn 4186, Issue , 2001, Pages 444-451

  Hibbs, M ^a   Ushida, M ^b   Babich, K ^c   Mitsui, H ^b   Bourov, A ^d  

^a IBM MICROELECTRONICS   (United States)

^b HOYA CORPORATION   (Japan)

^c IBM T J WATSON RESEARCH CENTER   (United States)

^d ROCHESTER INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

193 nm; Attenuating phase shift masks; Embedded phase shift masks; EPSM; Molybdenum silicide

Indexed keywords

CRYSTAL DEFECTS; EXCIMER LASERS; FILM GROWTH; IMAGING TECHNIQUES; MOLYBDENUM COMPOUNDS; PHASE SHIFT; PHOTOLITHOGRAPHY;

MOLYBDENUM SILICIDE;

MASKS;

EID: 0035043225     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.410721     Document Type: Article

References (12)

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