Electrical properties of MOCVD BST thin films annealed by rapid thermal annealing process

Integrated Ferroelectrics

Volumn 33, Issue 1-4, 2001, Pages 291-301

  Kil, D S ^a   Park, J B ^a   Lee, J S ^a   Yoon, J W ^a   Yu, Y S ^a   Roh, J S ^a   Kim, C T ^a   Hwang, J M ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

Barrier; BST; Dielectric; Leakage current; Rapid thermal annealing

Indexed keywords

BARIUM COMPOUNDS; CRYSTALLIZATION; DIELECTRIC PROPERTIES OF SOLIDS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RAPID THERMAL ANNEALING;

BARIUM STRONTIUM TITANATE; LEAKAGE CURRENT DENSITY;

THIN FILMS;

EID: 0035034450     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584580108222311     Document Type: Conference Paper

References (10)