Reservoir modeling for electromigration improvement of metal systems with refractory barriers

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2001, Pages 327-333

  Dion, M J ^a  

^a INTERSIL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; COPPER; CURRENT DENSITY; ELECTROMIGRATION; ELECTRONS; MATHEMATICAL MODELS; TITANIUM; TITANIUM NITRIDE;

REFRACTOR BARRIER METAL; SEMICONDUCTOR INTERCONNECT SYSTEM;

INTEGRATED CIRCUIT TESTING;

EID: 0035014251     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

1. Electromigration in thin aluminum films on titanium nitride
2. Stress generation by electromigration
3. Electromigration-induced drift failure of via contacts in multilevel metallization
4. The electromigration short-length effect in Ti-AlCu-Ti metallization with tungsten studs
5. The effect of current density and stripe length on resistance saturation during electromigration testing
6. Electromigration modeling for design rule development in microelectronic interconnects
7. Modeling and experimental characterization of electromigration in interconnect trees
8. Impact of test structure design on electromigration lifetime measurements
9. Electromigration performance of W-plug viafed lead structures
10. Recent problems in electromigration
11. Effect of VLSI interconnect layout on electromigration performance
12. Electromigration lifetime enhancement for lines with multiple branches