A novel physical based model of deep-submicron CMOS transistors mismatch for Monte Carlo SPICE simulation

ISCAS 2001 - 2001 IEEE International Symposium on Circuits and Systems, Conference Proceedings

Volumn 5, Issue , 2001, Pages 511-514

  Maxim, Adrian ^a   Gheorghe, Maxim ^b  

^a Cirrus Logic   (United States)

^b GHEORGHE ASACHI TECHNICAL UNIVERSITY OF IASI   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; MONTE CARLO METHODS; COMPUTER SIMULATION; PARAMETER ESTIMATION; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; TRANSISTORS;

DEEP SUBMICRON CMOS; DEEP SUBMICRON DEVICE; LATERAL DIFFUSION; MATCHING PARAMETERS; MOBILITY DEGRADATION; PHYSICAL BASED MODELING; PROCESS PARAMETERS; SECOND ORDER EFFECT;

SPICE; CMOS INTEGRATED CIRCUITS;

CHANNEL DOPING FLUCTUATIONS;

EID: 0034999970     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iscas.2001.922097     Document Type: Conference Paper

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