Cobalt silicide formation on 6H silicon carbide

Journal of Synchrotron Radiation

Volumn 6, Issue 3, 1999, Pages 188-189

  Porto, A O ^a   Boyanov, B I ^a   Sayers, D E ^a   Nemanich, R J ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

Metal semiconductor contacts; Molecular beam epitaxy; Silicon Carbide

Indexed keywords

EID: 0033440412     PISSN: 09090495     EISSN: None     Source Type: Journal    
DOI: 10.1107/S0909049599001326     Document Type: Article

References (5)

1. Lundberg, N. & Ostling, M. (1994). Physica Scripta T54, 273-277.
2. Nathan, M. & Ahearn, J. S. (1991). J. Appl. Phys. 70, 811.
3. Porter, L. M., Davis, R.F., Bow, J. S., Kim, M. J. & Carpenter, R. W. (1995). J. Mater. Res. 10(1), 26-33.
4. Sayers, D.E., Goeller, P.T., Boyanov, B.I. & Nemanich, R. J. (1998). J. Synchrotron Rad. 5, 1050-1051.
5. Sayers, D. E. & Bunker, B. A. (1998). X-Ray Absorption: Principles, Applications, Techniques of EXAFS, SEXAFS and XANES, edited by D.C. Koningsberger & R. Prins, New York: Wiley.