AlxGa1-xN materials and device technology for solar blind ultraviolet photodetector applications

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4288, Issue , 2001, Pages 219-229

  McClintock, R ^a   Sandvik, P ^a   Mi, K ^a   Shahedipour, F ^a   Yasan, A ^a   Jelen, C ^a   Kung, P ^a   Razeghi, M ^a  

^a Northwestern University   (United States)

Author keywords

AlxGa1 xN; Back illuminated; N type; Ohmic contacts; P type; Photodetector; Solar blind; Ultraviolet

Indexed keywords

EPITAXIAL GROWTH; GALLIUM NITRIDE; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OHMIC CONTACTS; PHOTODETECTORS; PHOTODIODES; QUANTUM EFFICIENCY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; THIN FILMS; ULTRAVIOLET RADIATION;

ALUMINUM GALLIUM NITRIDE; BACK ILLUMINATED; SOLAR BLIND ULTRAVIOLET PHOTODETECTOR;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0034862072     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.429409     Document Type: Conference Paper

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