Effects of polysilicon shield on spiral inductors for silicon-based RF IC’s

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 2001, Pages 158-161

  Sia, C B ^a   Yeo, K S ^a   Goh, W L ^a   Swe, T N ^a   Ng, C Y ^b   Chew, K W ^b   Loh, W B ^b   Chu, Sanford ^b   Chan, Lap ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

Floating shield; Ground shield; High resistive polysilicon; Quality factor; Spiral inductor; Substrate loss

Indexed keywords

CONDUCTIVE MATERIALS; ELECTRIC SHIELDING; POLYSILICON; SEMICONDUCTING SILICON; SUBSTRATES;

GROUND SHIELD; SPIRAL INDUCTORS;

ELECTRIC INDUCTORS;

EID: 0034854180     PISSN: 19308868     EISSN: None     Source Type: Journal    
DOI: 10.1109/VTSA.2001.934507     Document Type: Article

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