Practical application of full-feature alternating phase-shifting technology for a phase-aware standard-cell design flow

Proceedings - Design Automation Conference

Volumn , Issue , 2001, Pages 93-96

  Sanie, M ^a   Cote M ^a   Hurat, P ^a   Malhotra, V ^a  

^a SYNOPSYS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COST EFFECTIVENESS; INTEGRATED CIRCUIT LAYOUT; INTEGRATED CIRCUITS; PHASE SHIFT; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE;

OPTICAL PROXIMITY CORRECTION (OPC);

MASKS;

EID: 0034853722     PISSN: 0738100X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1145/378239.378346     Document Type: Conference Paper

References (13)

1. Improving resolution in photolithography with a phase-shifting mask
2. Motorola achieves industry's first 0.1 micron production silicon using advanced phase shifting technology
3. UMC licenses numerical technologies' phase-Shifting technology to achieve 70-nanometer gates on 0.13-Micron worldlogic(SM) processes
4. Sub-100nm SOI CMOS by DUV optical lithography
5. The application of alternating phase-shifting masks to 140nm gate patterning: Line width control improvements and design optimization
6. The application of alternating phase-shifting masks to 140nm gate patterning (II): Mask design and manufacturing tolerances
7. Automated layout and phase assignment techniques for dark field alternating PSM
8. Subwavelength lithography and its potential impact on design and EDA
9. Optimal phase conflict removal for layout of dark field alternating phase shifting masks
10. Tutorial slides
11. Method of designing phase-shifting masks utilizing a compactor
12. Alternating PSM design and its implication to the design-to-manufacturing flow