Fabrication of novel self-aligned InP/InGaAs HBT's using dummy emitter

Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Volumn 2000-January, Issue , 2000, Pages 351-354

  Kim, Moonjung ^a   Jeon, Sookun ^a   Yoon, Myunghoon ^a   Yang, Kyounghoon ^a   Kwon, Young Se ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; CRYSTAL ORIENTATION; HETEROJUNCTIONS; MICROELECTRONICS;

CONTACT SPACINGS; DEVICE PERFORMANCE; EMITTER LAYERS; ETCHING CHARACTERISTICS; HIGH CURRENT GAIN; HIGH FREQUENCY HF; INP/INGAAS HBT; SELF ALIGNED PROCESS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 84949801577     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/COMMAD.2000.1022962     Document Type: Conference Paper

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