Reduction in the operating current of high-power 660-nm AlGaInP laser diodes with an AlInP current blocking layer

Conference on Lasers and Electro-Optics Europe - Technical Digest

Volumn , Issue , 2001, Pages 83-

  Hiroyama, R ^a   Inoue, D ^a   Nomura, Y ^a   Shono, M ^a   Sawada, M ^a  

^a SANYO ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; ELECTRIC CURRENTS; HIGH POWER LASERS; LASER MODES; MIRRORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; TENSILE STRESS; ZINC;

CURRENT BLOCKING LAYERS;

SEMICONDUCTOR LASERS;

EID: 0034806147     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/cleo.2001.947503     Document Type: Conference Paper

References (3)

1. Low threshold current 650 nm band refractive index-guided AlGaInP laser diodes with strain-compensated MQW active layer
2. Strain-compensated multiple quantum well 630 nm laser diodes