Coulomb blockade in strained-Si nanowires on leaky virtual substrates

Semiconductor Science and Technology

Volumn 16, Issue 2, 2001, Pages 72-76

  Kanjanachuchai, S ^a   Thornton, T J ^b   Fernandez J M ^b   Ahmed, H ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; FABRICATION; HETEROJUNCTIONS; LEAKAGE CURRENTS; NANOSTRUCTURED MATERIALS; SUBSTRATES;

NANOWIRES;

ELECTRIC WIRE;

EID: 0034836123     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/16/2/303     Document Type: Article

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