Negative magnetoresistance and electron-electron interaction in Si:SiGe quantum wells

Surface Science

Volumn 361-362, Issue , 1996, Pages 547-549

  Thornton, T J ^a   Matsumura, A ^a,b   Fernandez J ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b NIPPON STEEL CORPORATION   (Japan)

Author keywords

Electrical transport; Molecular beam epitaxy; Quantum wells; Silicon germanium

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT PROPERTIES; MAGNETIC FIELDS; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; OSCILLATIONS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS;

ELECTRON-ELECTRON INTERACTION; SHUBNIKOV-DE HAAS OSCILLATIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030196909     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00466-9     Document Type: Article

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