Intermixing behavior in InGaAs/InGaAsP multiple quantum wells with dielectric and InGaAs capping layers

Applied Physics A: Materials Science and Processing

Volumn 73, Issue 3, 2001, Pages 357-360

  Lee, M K ^a   Song, J D ^a   Yu, J S ^a   Kim, T W ^b   Lim, H ^c   Lee, Y T ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Kwangwoon University   (South Korea)

^c Ajou University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRONIC STRUCTURE; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SILICA; SILICON NITRIDE;

CAPPING LAYERS; INTEGRATED PHOTONIC DEVICES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034831050     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390100727     Document Type: Article

References (15)