Focused ion-beam implantation induced thermal quantum-well intermixing for monolithic optoelectronic device integration

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 4, Issue 4, 1998, Pages 595-605

  Reithmaier, Johann Peter ^a,b,c,d,e   Forchel, Alfred ^b,f,g  

^a IEEE   (Germany)

^b UNIVERSITY OF WÜRZBURG   (Germany)

^c TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^d SIEMENS AG   (Germany)

^e IBM   (Switzerland)

^f UNIVERSITY OF STUTTGART   (Germany)

^g University of Würzburg ^*

Author keywords

DFB laser; Focused ion beam implantation; Monolithic integration; Optoelectronic devices; Quantum well intermixing

Indexed keywords

DISTRIBUTED FEEDBACK LASERS; ENERGY GAP; INTEGRATED CIRCUIT MANUFACTURE; INTEGRATED OPTOELECTRONICS; ION BEAMS; ION IMPLANTATION; SEMICONDUCTING INDIUM PHOSPHIDE; WAVEGUIDES;

FOCUSED ION BEAM IMPLANTATION; QUANTUM-WELL INTERMIXING; SINGLE-MODE EMISSION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032119764     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.720469     Document Type: Article

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