Impurity-induced layer disordering of quantum-well heterostructures: Discovery and prospects

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 4, Issue 4, 1998, Pages 584-593

  Holonyak Jr , Nick ^a,b  

^a IEEE   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

Bulk crystal larger bandgap; Carrier confinement; Disorder defined lasers; Disorder defined optoelectronic devices; Disorder defined waveguides; Impurity induced layer disordering; Impurity free disordering; Layer disordering; Layer interdiffusion

Indexed keywords

ANNEALING; CRYSTAL IMPURITIES; ENERGY GAP; HETEROJUNCTIONS; OPTOELECTRONIC DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES; ZINC;

IMPURITY-INDUCED LAYER DISORDERING (IILD); STOCHASTIC ALLOY;

QUANTUM ELECTRONICS;

EID: 0032117547     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.720468     Document Type: Article

References (78)

1. N. Holonyak, Jr., "The semiconductor laser: A thirty-five-year perspective," Proc. IEEE, vol. 85, pp. 1678-1693, Nov. 1997.
2. J. Lowen and R. H. Rediker, "Gallium arsenide diffused diodes," J. Electrochem. Soc., vol. 107, pp. 26-29, Jan. 1960.
3. R. J. Keyes and T. M. Quist, 1902 IRE Solid State Device Research Conference, Durham, NH, unpublished. Also, "Recombination radiation emitted by gallium arsenide," Proc. IRE., vol. 50, pp. 1822-1823, Aug. 1962.
4. R. N. Hall, G. E. Fenner, J. D. Kingsley, T. J. Soltys, and R. O. Carlson, "Coherent light emission from GaAs junctions," Phys. Rev. Lett., vol. 9, pp. 366-368, Nov. 1, 1962.
5. M. I. Nathan, W. P. Dumke, G. Burns, F. H. Dill, Jr., and G. Lasher, "Stimulated emission of radiation from GaAs p-n junctions," Appl. Phys. Lett., vol. 1, pp. 62-64, Nov. 1962.
6. x) junctions," Appl. Phys. Lett., vol. 1, pp. 82-83, Dec. 1962.
7. T. M. Quist, R. H. Rediker, R. J. Keyes, W. E. Krag, B. Lax, A. L. McWhorter, and H. J. Zeiger, "Semiconductor maser of GaAs," Appl. Phys. Lett., vol. 1, pp. 91-92, Dec. 1962.
8. R. N. Hall, "Injection lasers," IEEE J. Quantum Electron., vol. QE-23, pp. 674-678, June 1987.
9. M. I. Nathan, "Invention of the injection laser at IBM," IEEE J. Quantum Electron., vol. QE-23, pp. 679-683, June 1987.
10. N. Holonyak, Jr., "Semiconductor alloy lasers - 1962," IEEE J. Quantum Electron., vol. QE-23, pp. 684-691, June 1987.
11. R. H. Rediker, "Research at Lincoln Laboratory leading up to the development of the injection laser in 1962," IEEE J. Quantum Electron., vol. QE-23, pp. 692-695, June 1987.
12. W. D. Laidig, N. Holonyak, Jr., M. D. Camras, K. Hess, J. J. Coleman, P. D. Dapkus, and J. Bardeen, "Disorder of an AlAs-GaAs superlattice by impurity diffusion," Appl. Phys. Lett., vol. 38, pp. 776-778, May 1981.
13. 1-xAs-GaAs superlattice by donor diffusion," Appl. Phys. Lett., vol. 45, pp. 549-551, Sept. 1984.
14. 1-xAs-GaAs lasers defined by defect diffusion," Appl. Phys. Lett., vol. 49, pp. 510-512, Sept. 1986.
15. 1-y source," Appl. Phys. Lett., vol. 50, pp. 609-611, Mar. 1987.
16. D. G. Deppe and N. Holonyak, Jr., "Atom diffusion and impurity-induced layer disordering in quantum well III-V semiconductor heterostructures," J. Appl. Phys., vol. 64, pp. R93-R113, Dec. 1988.
17. H. Kroemer, "A proposed class of heterojunction injection lasers," Proc. IEEE, vol. 51, pp. 1782-1783, Dec. 1963.
18. _, "Theory of a wide-gap emitter for transistors," Proc. IRE, vol. 45, pp. 1535-1537, Nov. 1957.
19. N. Holonyak, Jr., D. C. Jillson, and S. F. Bevacqua, "Halogen vapor transport and growth of epitaxial layers of intermetallic compounds and compound mixtures," in Metallurgy of Semiconductor Materials, J. B. Schroeder, Ed. New York: Interscience Publishers, 1962, vol. 15, pp. 49-59.
20. N. Holonyak, Jr., "Use of metallic halide as a carrier GAS in the vapor deposition of III-V compounds," U.S. Patent 3 249 473, May 3, 1966, filed May 21, 1965; continuation of Serial 1 34 903, filed Aug. 30, 1961.
21. xAs p-n junctions grown by liquid-phase epitaxy," Appl. Phys. Lett., vol. 11, pp. 81-83, Aug. 1967.
22. L. Esaki and R. Tsu, "Superlattice and negative differential conductivity in semiconductors," IBM J. Res. Dev., vol. 16, pp. 61-65, Jan. 1970.
23. z (x ∼ 0.12, z ∼ 0.26) DH laser with multiple thin-layer (<500 Å) active region," Appl. Phys. Lett., vol. 31, pp. 288-290, Aug. 1977.
24. z well (x ∼ 0.13, z ∼ 0.29; ∼400 Å) in an InP p-n junction," Appl. Phys. Lett., vol. 31, pp. 534-536, Oct. 1977.
25. xAs-GaAs heterojunctions grown by metallorganic chemical vapor deposition," in GaAs and Related Compounds, 1978, C. M. Wolfe, Ed. London, U.K.: Inst. Phys., 1979, pp. 1-9.
26. 1-xAs quantum-well lasers," Appl. Phys. Lett., vol. 33, pp. 73-75, July 1978.
27. 1-xAs-GaAs quantum-well heterostructures," Appl. Phys. Lett., vol. 33, pp. 737-739, Oct. 1978.
28. 1-xAs-GaAs heterostructure diodes grown by metalorganic chemical vapor deposition," Appl. Phys. Lett., vol. 34, pp. 265-267, Feb. 1979.
29. 1-xAs-GaAs injection lasers grown by metalorganic chemical vapor deposition," Appl. Phys. Lett., vol. 35, pp. 487-489, Oct. 1979.
30. z heterostructure lasers," J. Appl. Phys., vol. 49, pp. 2551-2556, Apr. 1978.
31. xAs/GaAs double heterostructure lasers grown by metalorganic chemical vapor deposition," Appl. Phys. Lett., vol. 31, pp. 466-468, Oct. 1, 1977.
32. xAs-GaAs double-heterostructure lasers grown by metalorganic chemical vapor deposition," Appl. Phys. Lett., vol. 32, pp. 473-475, Apr. 1978.
33. N. Holonyak, Jr. and D. R. Scifres, "Window-heat sink sandwich for optical experiments: Diamond (or sapphire)-semiconductor-indium sandwich," Rev. Sci. Instrum., vol. 42, pp. 1885-1886, Dec. 1971.
34. xP," Appl. Phys. Lett., vol. 17, pp. 430-432, Nov. 1970.
35. xP," Appl. Phys. Lett., vol. 18, pp. 160-162, Feb. 1971.
36. D. R. Scifres, H. M. Macksey, N. Holonyak, Jr., and R. D. Dupuis, "Optically pumped ITM-,Ga, P platelet lasers from the infrared to the yellow (8900-5800 Å, 77° K)," J. Appl. Phys., vol. 43, pp. 1019-1022, Mar. 1972.
37. xP p-n junction lasers," Appl. Phys. Lett., vol. 19, pp. 271-273, Oct. 1971.
38. D. L. Keune, N. Holonyak, Jr., R. D. Burnham, D. R. Scifres, H. R. Zwicker, J. W. Burd, M. G. Craford, D. L. Dickus, and M. J. Fox, "Optical phase-shift measurement of carrier decay times (77° K) on lightly doped double-surface and surface-free epitaxial GaAs," J. Appl. Phys., vol. 42, pp. 2048-2053, Apr. 1971.
39. D. R. Scifres, N. Holonyak, Jr., R. D. Burnham, H. R. Zwicker, D. L. Keune, W. O. Groves, M. G. Craford, and J. W. Burd, "Optical phase shift measurement (77° K) of carrier decay time in direct GaAsP," Solid-State Electron., vol. 14, pp. 949-956, Oct. 1971.
40. H. Shichijo, R. M. Kolbas, N. Holonyak, Jr., R. D. Dupuis, and P. D. Dapkus, "Carrier collection in a semiconductor quantum well," Solid State Commun., vol. 27, pp. 1029-1032, Sept. 1978.
41. 1-xAs-GaAs heterostructure laser," Appl. Phys. Lett., vol. 34, pp. 502-505, Apr. 1979.
42. N. Holonyak, Jr., D. W. Nam, E. J. Vesely, L. J. Guido, P. Gavrilovic, K. Meehan, W. Stutius, and J. E. Williams, "Variable resonator (variable Q) photopumped phonon-assisted quantum well laser operation," Appl. Phys. Lett., vol. 56, pp. 60-62, Jan. 1990.
43. N. Holonyak, Jr., D. W. Nam, W. E. Plano, K. C. Hsieh, and R. D. Dupuis, "Photopumping of quantum well heterostructures at high or low Q: Phononassisted laser operation," J. Phys. Chem., vol. 94, pp. 1082-1087, Feb. 1990.
44. L. L. Chang and A. Koma, "Interdiffusion between GaAs and AlAs," Appl. Phys. Lett., vol. 29, pp. 138-140, Aug. 1976.
45. 1-xAs-GaAs quantum-well heterostructures," Solid State Commun., vol. 38, pp. 301-304, Apr. 1981.
46. 1-xAs quantum well heterostructure lasers by layer interdiffusion," J. Appl. Phys., vol. 54, pp. 5637-5641, Oct. 1983.
47. 1-xAs-GaAs superlattices," Appl. Phys. Lett., vol. 40, pp. 821-824, May 1982.
48. i-xAs-GaAs (x = 0.5 and 1) superlattices and quantum-well heterostructure lasers," J. Appl. Phys., vol. 53, pp. 6037-6042, Sept. 1982.
49. 1-xAs-GaAs superlattices," Appl. Phys. Lett., vol. 38, pp. 118-120, Feb. 1981.
50. 1-xAs-GaAs quantum-well heterostructures," Phys. Rev. Lett., vol. 45, pp. 1703-1706, Nov. 1980.
51. J. A. Rossi, N. Holonyak, Jr., P. D. Dapkus, J. B. McNeely, and F. V. Williams, "Laser recombination transition in p-type GaAs," Appl. Phys. Lett., vol. 15, pp. 109-110, Aug. 1969.
52. W. D. Laidig, N. Holonyak, Jr., M. D. Camras, K. Hess, J. J. Coleman, P. D. Dapkus, and J. Bardeen, "Disorder of an AlAs-GaAs superlattice by impurity diffusion," Appl. Phys. Lett., vol. 38, pp. 776-778, May 1981.
53. N. Holonyak, Jr., B. A. Vojak, R. M. Kolbas, R. D. Dupuis, and P. D. Dapkus. "Bevel cross sectioning of ultra-thin (∼100 Å) III-V semiconductor layers," Solid-State Electron., vol. 22. pp. 431-433, Apr. 1979.
54. N. Holonyak, Jr. and Wyn D. Laidig, "Method for producing integrated semiconductor light emitter," U.S. Patent 4 378 255, Mar. 29, 1983; filed May 6, 1981.
55. N. Holonyak, Jr. and W. D. Laidig, "A semiconductor device," Japanese patent 1 600 010, Jan. 31, 1991.
56. N. Holonyak, Jr., W. D. Laidig, M. D. Camras, J. J. Coleman, and P. D. Dapkus, "IR-Red GaAs-AlAs superlattice laser monolithically integrated in a yellow-gap cavity," Appl. Phys. Lett., vol. 39, pp. 102-104, July 1981.
57. D. G. Deppe and N. Holonyak, Jr., "Atom diffusion and impurity-induced layer disordering in quantum well III-V semiconductor heterostructures," J. Appl. Phys., vol. 64, pp. R93-R113, Dec. 1988.
58. D. A. Jenny, "The status of transistor research in compound semiconductors," Proc. IRE, vol. 46, pp. 959-968, June 1958.
59. N. Holonyak, Jr., "John Bardeen and the point-contact transistor," Phys. Today, vol. 45, no. 4, pp. 36-43, Apr. 1992.
60. H. C. Casey, Jr., "Diffusion in the III-V compound semiconductors," in Atomic Diffusion in Semiconductors, D. Shaw, Ed. New York: Plenum, 1973, pp. 351-430.
61. N. Holonyak, Jr., "Semiconductor device fabrication with disordering elements introduced into active region," U.S. Patent 4511 408, Apr. 16, 1985, filed Apr. 22, 1982.
62. _, "Semiconductor device with disordered active region," U.S. Patent 4 594 603, June 10, 1986, filed Jan. 24, 1985.
63. _, "Forming disordered layer by controlled diffusion in heterojuncion III-V semiconductor," U.S. Patent 4 639 275, Jan. 27, 1987, filed Aug. 31, 1984.
64. J. J. Coleman, P. D. Dapkus, C. G. Kirkpatrick, M. D. Camras, and N. Holonyak, Jr., "Disorder of an AlAs-GaAs superlattice by silicon implantation," Appl. Phys. Lett., vol. 40, pp. 904-906, May 1982.
65. M. D. Camras, J. J. Coleman, N. Holonyak, Jr., K. Hess, P. D. Dapkus, and C. G. Kirkpatrick, "Disorder of AlAs/GaAs superlattices by the implantation and diffusion of impurities," in Conf. on GaAs and Related Compounds, Sept 1982, G. E. Stillman, Ed. London, U.K.: Inst. Physics, Conf. Series, no. 65, 1983, pp. 233-239.
66. 1-xAs superlattices," Appl. Phys. Lett., vol. 47, pp. 130-132, July 1985.
67. x(x ∼ 0.6) superlattices," Appl. Phys. Lett., vol. 42, pp. 185-187, Jan. 1983.
68. 1-xAs-GaAs superlattice by donor diffusion," Appl. Phys. Lett., vol. 45, pp. 549-551, Sept. 1984.
69. C. J. Frosch and L. Derick, "Surface protection and selective masking during diffusion in silicon," J. Electrochem. Soc., vol. 104, pp. 547-552, Sept. 1957.
70. C. J. Frosch, "Silicon diffusion technology," in Transistor Technology, F. J. Biondi, Ed. Princeton, NJ: D. Van Nostrand, 1958, vol. III, pp. 90-99.
71. 1-xAs-GaAs lasers defined by defect diffusion," Appl. Phys. Lett., vol. 49, pp. 510-512, Sept. 1986.
72. 1-xAs-GaAs quantum well lasers defined by impurity-induced (Si) layer disordering," Appl. Phys. Lett., vol. 50, pp. 632-634, Mar. 1987.
73. J. M. Gray, J. H. Marsh, and J. S. Roberts, "High-power antiguided laser array fabricated without the need for overgrowth," IEEE Photon. Technol. Lett., vol. 10, pp. 328-330, Mar. 1998.
74. A. Shima, H. Tada, K. Ono, M. Fujiwara, T. Utakouji, T. Kimura, M. Takemi, and H. Higuchi, "Highly reliable 60 °C 50-mW operation of 650-nm band window-mirror laser diodes," IEEE Photon. Technol. Lett., vol. 9, pp. 413-415, Apr. 1997.
75. x)," J. Appl. Phys., vol. 36, pp. 3790-3801, Dec. 1965.
76. N. Holonyak, Jr., C. M. Wolfe, and J. S. Moore, "Vapor-liquid-solid growth of gallium phosphide," Appl. Phys. Lett., vol. 6, pp. 64-65, Feb. 1965.
77. P. Gavrilovic, F. P. Dabkowski, K. Meehan, J. E. Williams, W. Stutius, K. C. Hsieh, N. Holonyak, Jr., M. A. Shahid, and S. Mahajan, "Disordering of the ordered structure In MOCVD-grown GaInP and AlGaInP by impurity diffusion and thermal annealing," in 4th Int. Conf. Metalorganic Vapor Phase Epitaxy, Hakone, Japan, May 16-20 1988.
78. , "Disordering of the ordered structure In MOCVD-grown GaInP and AlGaInP by impurity diffusion and thermal annealing," J. Cryst. Growth, vol. 93, pp. 426-433, Nov./Dec. 1988.