Bandgap tuning of In0.53Ga0.47As/InP multiquantum well structure by impurity free vacancy diffusion using In0.53Ga0.47As cap layer and SiO2 dielectric capping

Electronics Letters

Volumn 33, Issue 13, 1997, Pages 1179-1181

  Lee, J H ^a   Si, S K ^a   Moon, Y B ^a   Yoon, E J ^a   Kim, S J ^a  

^a Seoul National University   (South Korea)

Author keywords

Optoelectronic devices; Semiconductor quantum wells

Indexed keywords

ANNEALING; CRYSTAL IMPURITIES; DIELECTRIC MATERIALS; DIFFUSION IN SOLIDS; ENERGY GAP; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SILICA; TUNING;

DIELECTRIC CAPPING MATERIAL;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031168565     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970761     Document Type: Article

References (7)

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