Relation between plasma process-induced oxide failure fraction and antenna ratio

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings

Volumn , Issue , 2001, Pages 16-19

  Wang, Z ^a   Scarpa, A ^a   Salm, C ^a   Kuper, F ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

Antenna ratio; Gate oxide; Plasma process induced damage

Indexed keywords

ANTENNAS; ELECTRIC CURRENTS; GATES (TRANSISTOR); MATHEMATICAL MODELS; PLASMA APPLICATIONS;

ANTENNA RATIO (AR); GATE OXIDES;

CMOS INTEGRATED CIRCUITS;

EID: 0034829031     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. Model for photoresist-induced charging damage in ultra-thin gate oxides
2. Quantifying a simple antenna design rule
3. Relation between product yield and plasma process induced damage
4. On the dependence of plasma-induced charging damage on antenna area
5. Anomalously weak antenna ratio dependence of plasma process-induced damage
6. Prediction of plasma charging induced gate oxide tunneling current and antenna dependence by plasma charging probe
7. A model for evaluating cumulative oxide damage from multiple plasma processes
8. Monitoring plasma-process induced damage in thin oxide
9. Topographical dependence of charging and new phenomenon during Inductively Coupled Plasma (ICP) CVD process
10. Transient fuse structures: The role of metal etching vs. dielectric deposition