Prediction of plasma charging induced gate oxide tunneling current and antenna dependence by plasma charging probe

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings

Volumn , Issue , 1996, Pages 20-23

  Ma, Shawming ^a   McVittie, James P ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTENNAS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CHARGE; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; EQUIVALENT CIRCUITS; MAGNETIC FIELD EFFECTS; MATHEMATICAL MODELS; MOS DEVICES; OXIDES; PLASMA ETCHING; VOLTAGE MEASUREMENT;

GATE OXIDES; PHOTORESIST ASHING PROCESS; PLASMA CHARGING DAMAGE; STANFORD PLASMA ON WAFER REAL TIME PROBES;

PLASMA PROBES;

EID: 0029722639     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)