Mechanism of Marangoni convection influence on dopant distribution in Ge space-grown single crystals

Journal of Crystal Growth

Volumn 223, Issue 1-2, 2001, Pages 29-37

  Artemyev, V K ^a   Folomeev, V I ^a   Ginkin, V P ^a   Kartavykh, A V ^b   Mil'vidskii, M G ^b   Rakov, V V ^b  

^a Russian Federal Scientific Center   (Russian Federation)

^b Inst Chem Prob of Microlectron   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DOPING (ADDITIVES); HEAT CONVECTION; MASS TRANSFER; MATHEMATICAL MODELS; MICROGRAVITY PROCESSING; SEMICONDUCTING GERMANIUM; SINGLE CRYSTALS;

MARANGONI CONVECTION;

CRYSTAL GROWTH;

EID: 0034818944     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00981-7     Document Type: Article

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