Specific effects of Ge single crystals doping during their floating zone processing aboard spacecrafts

Microgravity Science and Technology

Volumn 12, Issue 1, 1999, Pages 16-22

  Kartavykh, A V ^a   Kopeliovich, E S ^a   Mil'vidskii, M G ^a   Rakov, V V ^a  

^a Inst of Chemical Problems of   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY LAYER FLOW; CRYSTAL GROWTH FROM MELT; HEAT CONVECTION; HYDRODYNAMICS; MATHEMATICAL MODELS; MOLTEN MATERIALS; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; SPACECRAFT; SURFACE TENSION;

FLOATING ZONE (FZ) TECHNIQUE; PHOTON SPACECRAFTS;

MICROGRAVITY PROCESSING;

EID: 0033283660     PISSN: 09380108     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (15)

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