Crystal growth: Anomalous effects in dopant distribution in Ge single crystals grown by the floating zone technique aboard spacecrafts

Kristallografiya

Volumn 45, Issue 1, 2000, Pages 167-174

  Kartavykh, A V ^a   Kopeliovich, E S ^a   Milvidskii, M G ^a   Rakov, V V ^a  

^a NONE

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[No Author keywords available]

Indexed keywords

EID: 18844394425     PISSN: 00234761     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (15)

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2. ASTM F76-86 Standard Test Methods for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Single-Crystal Semiconductors. 1991.
3. Burton J.A., Prim R.S., Slichter W.P. // J. Chem. Phys. 1953. V. 21. No 11. P. 1987.
4. Hamacher H., Richter H.E., Jilg R., Drees S. QSAM Ergebnisse von FOTON-11. Munich.: Deutsches Zentrum fur Luft- und Raumfahrt e. V., 1998.
5. Mil'vidskii M.G., Kartavykh A.V., Kopeliovich E.S. et al. // Journal of Journals. UNESCO. 1998. V. 2. No 1. P. 6.