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Journal of Crystal Growth

Volumn 186, Issue 1-2, 1998, Pages 203-213

Modeling of dopant segregation in vertical zone-melting crystal growth

(2) Lan, C W a Liang, M C a

a NATIONAL CENTRAL UNIVERSITY (Taiwan)

Author keywords

Crystal growth; Dopant segregation; Finite volume; Mixing; Natural convection; Zone melting

Indexed keywords

COMPUTER SIMULATION; FINITE VOLUME METHOD; INTERFACES (MATERIALS); MASS TRANSFER; MATHEMATICAL MODELS; MIXING; NATURAL CONVECTION; SEMICONDUCTING GALLIUM; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

DYNAMIC DOPANT SEGREGATION; VERTICAL ZONE MELTING (VZM);

CRYSTAL GROWTH FROM MELT;

EID: 0032024821 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(97)00465-X Document Type: Article

Times cited : (18)

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