Anomalous effects of dopant distribution in Ge single crystals grown by FZ-technique aboard spacecrafts

Journal of Crystal Growth

Volumn 205, Issue 4, 1999, Pages 497-502

  Kartavykh, A V ^a   Kopeliovich, E S ^a   Mil'vidskii, M G ^a   Rakov, V V ^a  

^a Inst Chem Prob of Microlectron   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

HEAT CONVECTION; MASS TRANSFER; MICROGRAVITY PROCESSING; MIXING; PHOTONS; SEMICONDUCTING GALLIUM; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; SURFACE ACTIVE AGENTS; SURFACE TENSION; TEMPERATURE;

DISTRIBUTION COEFFICIENT; FLOATING ZONE METHOD; MARANGONI CONVECTION; SURFACE TENSION DRIVEN;

CRYSTAL GROWTH;

EID: 0033327812     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00225-0     Document Type: Article

References (10)

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10. Mil'vidskii M.G., Kartavykh A.V., Kopeliovich E.S., Rakov V.V., Verezub N.A., Prostomolotov A.I. Journal of Journals (UNESCO). 2:1998;6.