Electrical characterization of Ar-ion-bombardment-induced damage in Au/Si and PtSi/Si Schottky barrier contacts

Semiconductor Science and Technology

Volumn 16, Issue 2, 2001, Pages 83-90

  Zhu, Shiyang ^a   Detavernier, C ^a   Van Meirhaeghe, R L ^a   Cardon, F ^a   Blondeel, A ^a   Clauws, P ^a   Ru, Guo Ping ^b   Li, Bing Zong ^b  

^a GHENT UNIVERSITY   (Belgium)

^b FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON EMISSION; ELECTRON MICROSCOPY; ION BOMBARDMENT; SEMICONDUCTING SILICON; SUBSTRATES;

ELECTRICAL CHARACTERIZATION;

SCHOTTKY BARRIER DIODES;

EID: 0034817798     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/16/2/305     Document Type: Article

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