Formation of ultra-thin PtSi layers with a 2-step silicidation process

Microelectronic Engineering

Volumn 37-38, Issue , 1997, Pages 507-514

  Donaton, R A ^a   Jin, S ^a   Bender, H ^a   Zagrebnov, M ^a   Baert, K ^a   Maex, K ^a   Vantomme, A ^b   Langouche, G ^b  

^a IMEC   (Belgium)

^b KU LEUVEN   (Belgium)

Author keywords

PtSi; RTP; Schottky barrier height; Sputtering

Indexed keywords

ETCHING; PLATINUM COMPOUNDS; SCHOTTKY BARRIER DIODES; SPUTTER DEPOSITION; ULTRATHIN FILMS;

RAPID THERMAL PROCESSING (RTP) SYSTEMS; TWO STEP SILICIDATION PROCESS;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0031275793     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00153-6     Document Type: Article

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