Effect of an epitaxial CoSi2 layer on diffusion of B and Sb in Si during annealing and oxidation

Journal of Applied Physics

Volumn 85, Issue 11, 1999, Pages 7639-7645

  Tyagi, A K ^b   Kappius, L ^a   Breuer, U ^b   Bay, H L ^a   Becker, J S ^b   Mantl, S ^a   Dietze, H J ^b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ANTIMONY; BORON; COBALT COMPOUNDS; DIFFUSION IN SOLIDS; MOLECULAR BEAM EPITAXY; OXIDATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SEMICONDUCTOR SUPERLATTICES; SILICON WAFERS;

COBALT DISILICIDE; MOLECULAR BEAM ALLOTAXY (MBA);

CONDUCTIVE FILMS;

EID: 0032620167     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370566     Document Type: Article

References (25)

1. J. R. Tucker, C. Wang, and T.-C. Shen, Nanotechnology 7, 275 (1996).
2. K. Maex, Mater. Sci. Eng., R. 11, 53 (1993).
3. R. T. Tung, F. Schrey, and S. M. Yalisove, Appl. Phys. Lett. 55, 2005 (1989).
4. J. R. Jimenez, L. J. Schowalter, L. M. Hsiung, K. Rajan, S. Hashimoto, R. D. Thompson, and S. S. Iyer, J. Vac. Sci. Technol. A 8, 3014 (1990).
5. R. Stalder, C. Schwarz, H. Sirringhaus, and H. von Känel, Surf. Sci. 271, 355 (1992).
6. R. T. Tung, Appl. Surf. Sci. 117/118, 268 (1997).
7. S. Mantl and H. L. Bay, J. Phys. D 61, 267 (1992).
8. S. Mantl, M. Dolle, St. Mesters, P. F. P. Fichtner, and H. L. Bay, Appl. Phys. Lett. 67, 3459 (1995).
9. Q. T. Zhao, F. Klinkhammer, M. Dolle, L. Kappius, and S. Mantl, Appl. Phys. Lett. (in press).
10. H.-J. Gossmann, C. S. Rafferty, H. S. Luftman, F. C. Unterwald, T. Boone, and J. M. Poate, Appl. Phys. Lett. 63, 639 (1993).
11. E. Guerrrero, W. Jüngling, H. Pötzl, U. Gösele, L. Mader, M. Grasserbauer, and G. Stingeder, J. Electrochem. Soc. 2181 (1986).
12. S. B. Herner, K. S. Jones, H.-J. Gossmann, J. M. Poate, and H. S. Luftman, Appl. Phys. Lett. 68, 1686 (1996).
13. P. M. Fahey, P. B. Griffin, and J. D. Plummer, Rev. Mod. Phys. 61, 289 (1989).
14. F. Klinkhammer, M. Dolle, L. Kappius, and S. Mantl, Microelectron. Eng. 37/38, 515 (1997).
15. H.-J. Gossmann, F. C. Unterwald, and H. S. Luftman, J. Appl. Phys. 73, 8237 (1993).
16. M. Hacke, Thesis JÜL-3294, ISSN 0944-2952 (1996).
17. R. Tung and S. Ohmi, Mater. Res. Soc. Symp. Proc. (to be published).
18. A. K. Tyagi, M.-P. Macht, and V. Naundorf, Acta Metall. Mater. 39, 609 (1991).
19. W. H. Press, B. P. Flannery, S. A. Teukolsky, and W. T. Vetterling, Numerical Recipes in C (Cambridge University Press, Cambridge, 1988).
20. J. W. Honeycutt and G. A. Roygonyi, Appl. Phys. Lett. 58, 1302 (1991).
21. M. Wittmer, P. Fahey, G. J. Scilla, S. S. Iyer, and M. Tejwani, Phys. Rev. Lett. 66, 632 (1991).
22. P. Fahey and M. Wittmer, Mater. Res. Soc. Symp. Proc. 163, 529 (1990).
23. R. B. Fair, in Impurity Doping Process in Silicon, edited by F. F. Y. Wang (North-Holland , Amsterdam, 1981).
24. S. B. Hemer, H.-J. Gossmann, and R. T. Tung, Appl. Phys. Lett. 72, 2289 (1998).
25. T. K. Mogi, M. O. Thompson, H.-J. Gossmann, J. M. Poate, and H. S. Luftman, Appl. Phys. Lett. 69, 1273 (1996).