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Volumn 15, Issue 3, 1997, Pages 623-628

Deep level transient spectroscopy study of the damage induced in n-type silicon by a gate oxide etching in a CHF3/Ar plasma

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EID: 0343993911     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (9)

References (10)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.