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Volumn 15, Issue 3, 1997, Pages 623-628
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Deep level transient spectroscopy study of the damage induced in n-type silicon by a gate oxide etching in a CHF3/Ar plasma
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Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 0343993911
PISSN: 10711023
EISSN: None
Source Type: Journal
DOI: None Document Type: Article |
Times cited : (9)
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References (10)
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