Ion-bombardment effects on PtSi/ n-Si Schottky contacts studied by ballistic electron emission microscopy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 4, 2000, Pages 1942-1948

  Ru, Guo Ping ^a   Qu, Xin Ping ^a   Zhu, Shi Yang ^a   Li, Bing Zong ^a   Detavernier, C ^b   Van Meirhaeghe, R L ^b   Cardon, F ^b   Donaton, R A ^c   Maex, K ^c  

^a FUDAN UNIVERSITY   (China)

^b GHENT UNIVERSITY   (Belgium)

^c IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ION BOMBARDMENT; MICROSCOPIC EXAMINATION; REACTIVE ION ETCHING; SEMICONDUCTING SILICON COMPOUNDS;

BALLISTIC ELECTRON EMISSION SPECTROSCOPY; IMAGE FORCE LOWERING EFFECT; ION ENERGY; SCHOTTKY BARRIER HEIGHT; SCHOTTKY CONTACTS;

SCHOTTKY BARRIER DIODES;

EID: 0034412470     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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